首页> 外文会议>Eighth International Fatigue Congress Vol.2, Jun 3-7, 2002, Stockholm, Sweden >FATIGUE CRACKING MECHANISMS OF POROUS SILICON CARBIDE UNDER CYCLIC LOADING
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FATIGUE CRACKING MECHANISMS OF POROUS SILICON CARBIDE UNDER CYCLIC LOADING

机译:循环载荷下多孔碳化硅的疲劳断裂机理

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摘要

Notched specimens of porous silicon carbide with porosity 37% were fatigued under four-point bending at frequencies of 30 and 0.3 Hz. The fatigue life expressed in terms of time was rather insensitive to the test frequency, while that expressed in terms of cycles was much shorter for the case of 0.3 Hz than for 30 Hz. A time-dependent mechanism of stress corrosion cracking was mainly responsible for crack propagation, and stress cycling enhanced the crack propagation mechanism. The crack propagation curve was divided into Stages Ⅰ and Ⅱ. In Stage Ⅰ, the crack propagation rate decreased even though the applied stress intensity factor got larger with crack extension, and then turned to increase in Stage Ⅱ. This anomalous behavior is caused by crack-tip shielding due to microcracking and asperity contact. Fractographic observations showed that the fracture path was along the binder phase between SiC particles, more precisely along the interface between particles and binders.
机译:孔隙率为37%的多孔碳化硅的缺口试样在30和0.3 Hz的频率下的四点弯曲下疲劳。以时间表示的疲劳寿命对测试频率相当不敏感,而以周期表示的疲劳寿命在0.3 Hz的情况下比在30 Hz的情况下要短得多。应力腐蚀开裂的时间相关机理主要负责裂纹扩展,应力循环增强了裂纹扩展机理。裂纹扩展曲线分为Ⅰ阶段和Ⅱ阶段。 Ⅰ阶段,尽管随着裂纹扩展而施加的应力强度因子变大,但裂纹扩展速率却降低,然后在Ⅱ阶段转向增大。这种异常行为是由于微裂纹和粗糙接触导致的裂纹尖端屏蔽引起的。断裂观察表明,断裂路径是沿着SiC颗粒之间的粘结相,更精确地是沿着颗粒和粘结剂之间的界面。

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