Lattice-engineered MBE growth of high-indium-mole-fraction InGaAs for low-cost MMICs and 1.3- to 1.55-um OEICs

摘要

Abstract: Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining photonic devices applicable to the 1.3 to 1.55 $mu@m wavelength range and monolithic microwave integrated circuits (MMICs) on GaAs is demonstrated. A key factor in the MBE growth is incorporation of an InGaAs active layer having an indium arsenide mole fraction of 0.35 or greater and its lattice compatibility with the underlying semi-insulating GaAs substrate. The InGaAs layer used for the photonic devices, can also serve as the active channel for the high electron mobility transistors for application in MMICs. Several examples of active and passive photonic devices grown by MBE are presented including an optical ridge waveguide, and a photodetector for detection of light in the 1.3 $mU@m range. The material structure includes a 3-layer AlGaAs/GaAs/AlGaAs optical waveguide and a thin InGaAs absorbing layer situated directly above the optical waveguide. Metal-semiconductor- metal (MSM) photodetectors are formed on the top surface of the InGaAs layer for collection of the photo-induced carriers. The optical ridge waveguide is designed for lateral incidence of the light to enhance the MSM photodetector responsivity. Initial measurements on the optical waveguide and photodetector are presented. !0