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Nanoscale deformation of MEMS materials

机译:MEMS材料的纳米级变形

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Using a novel in-situ TEM triboprobe holder, nanoscale structures formed from polysilicon MEMS materials have been loaded to characterise the failure mechanisms of reduced scale components. Nanobridges with cross-section dimensions much less than 1μm have been deformed using both single, high displacement indentation and low displacement cyclic fatigue. In both deformation modes, significant residual plastic deformation is measured, occurring and accumulating in the polysilicon. This can be seen as a gradual curvature along the entire crossbeam upon unloading. Where the radius of curvature is very high, fracture of the beams at the centre point was generally also seen. When loading at much lower displacement but under fatigue conditions, localised heating around the moving contact point initiates carbon migration, forming a very strong bond. A high tensile force was needed to severe the contact during unload. Such in-situ techniques demonstrate a range of time dependant failure modes which can be overlooked using post-mortem analysis. In particular, the combined effect of localised frictional heating and contamination on the reliability of components that repeatedly comes into contact with one another.
机译:使用新颖的原位TEM摩擦探针支架,已加载了由多晶硅MEMS材料形成的纳米级结构,以表征尺寸缩小的组件的失效机理。横截面尺寸远小于1μm的纳米桥已经通过单个高位移压痕和低位移循环疲劳进行了变形。在这两种变形模式下,都测量,残留并在多晶硅中积累了明显的残余塑性变形。这可以看作是卸载时沿整个横梁的逐渐弯曲。在曲率半径非常高的地方,通常还可以看到光束在中心点处断裂。当以低得多的位移但在疲劳条件下加载时,移动接触点周围的局部加热会引发碳迁移,从而形成非常牢固的结合。在卸载过程中,需要很高的拉力来加强接触。这样的原位技术演示了一系列随时间变化的故障模式,这些故障模式可以通过事后分析忽略。特别是,局部摩擦加热和污染对反复接触的组件可靠性的综合影响。

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