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Pitting of Passivated Cadmium Monocrystals

机译:钝化镉单晶点蚀

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摘要

A combination of aqueous thermodynamics, anodic polarization tests and scanning electron microcopy was used to study the pitting behavior of Cd monocrystals in a phosphate buffered (pH 11.2) solution of 0.1 M NaCl. Pitting occurred in the passive region where the most stable passive film was Cd (OH)_2. The initial film thickness was estimated to be ~4 × 10~(-9) m. Pitting potentials were not reproducible, being variable within surfaces of the same orientation and between different orientations. Variability was attributed to structural defects in the passive film playing a major role in pit site nucleation. Early stages of pitting produced crystallographic facets consistent with (0001), {1010} and {1120} planes, the morphology becoming increasingly complex with pit growth. The pH decreased in the growing pit and increased the influence of chloride species on localized dissolution behavior.
机译:结合水热力学,阳极极化测试和扫描电子显微镜,研究了在0.1 M NaCl磷酸盐缓冲(pH 11.2)溶液中Cd单晶的点蚀行为。点蚀发生在最稳定的钝化膜为Cd(OH)_2的钝化区域。初始膜厚估计为〜4×10〜(-9)m。点蚀电位是不可再现的,在相同方向的表面内和不同方向之间是可变的。可变性归因于钝化膜中的结构缺陷,在凹坑位点成核中起主要作用。点蚀的早期产生与(0001),{1010}和{1120}面一致的晶体学小平面,随着点蚀的生长,形态变得越来越复杂。 pH在生长坑中降低,并增加了氯离子种类对局部溶解行为的影响。

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