Hot Phonon Effects on the Ultrafast Relaxation of Photoexcited Electrons in A1N

摘要

The effects of hot phonons on the ultrafast relaxation of photoexcited electrons in A1N has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with different densities and energies. The build-up and decay of the hot phonon distribution at several phonon wavevectors is examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron-electron scattering leads to fast thermalization of the carrier distributions.