首页> 外文会议>Conference on Ultrafast Phenomena in Semiconductors Ⅴ Jan 25-26, 2001, San Jose, USA >Structure and second-order nonlinear optical properties of CuCl nanocrystal-doped thin films prepared by rf sputtering
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Structure and second-order nonlinear optical properties of CuCl nanocrystal-doped thin films prepared by rf sputtering

机译:射频溅射制备CuCl纳米晶掺杂薄膜的结构和二阶非线性光学性质

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摘要

Second-order nonlinearity of CuCl nanocrystal-doped silica and indium tin oxide (ITO) films were examined by utilizing Maker fringe method. The films were prepared by means of the rf sputtering method with silica or ITO target on which CuCl pellets were placed. X-ray diffraction patterns of the films indicate that the mean crystallite size of CuCl nanocrystals was 20-30 nm based on the Sherrer's equation. The films exhibit second-harmonic generation. As for the films prepared at a substrate temperature of room temperature, the dependence of second-harmonic (SH) intensity on incident angle shows that the films have an optical uniaxial anisotropy with an axis perpendicular to the film surface. An orientation of CuCl nanocrystals was confirmed by X-ray diffraction patterns, but the direction of orientation depends on the sputtering condition. In contrast, the films prepared at a substrate temperature higher than 200℃ shows different incident angle dependence of second-harmonic intensity; a maximum of second-harmonic intensity appears at the incident angle of 0°. The spacings of (111), (220), and (311) planes estimated from X-ray diffraction patterns are smaller than the values of the bulk cubic structure.
机译:利用Maker条纹法研究了CuCl纳米晶掺杂二氧化硅和铟锡氧化物(ITO)薄膜的二次非线性。通过射频溅射法,用二氧化硅或ITO靶材制备薄膜,并在其上放置CuCl颗粒。膜的X射线衍射图表明,基于Sherrer方程,CuCl纳米晶体的平均晶粒尺寸为20-30nm。电影表现出二次谐波的产生。对于在室温的基板温度下制备的膜,二次谐波(SH)强度对入射角的依赖性表明,该膜具有光学单轴各向异性,其轴垂直于膜表面。通过X射线衍射图确认了CuCl纳米晶体的取向,但是取向的方向取决于溅射条件。相比之下,在高于200℃的基板温度下制备的薄膜表现出不同的二次谐波强度入射角依赖性。在入射角为0°时出现最大的二次谐波强度。由X射线衍射图估计的(111),(220)和(311)面的间隔小于整体立方结构的值。

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