A CdSe quantum dot in a ZnSe nanowire as an efficient high-temperature single-photon source

摘要

We present a high-temperature single-photon source based on a CdSe quantum dot in a ZnSe nanowire. The nanowires have been grown by Molecular Beam Epitaxy in the Vapour-Liquid-Solid growth mode. We utilized a two-step growth process, where a thin, defect free ZnSe nanowire on a top of a nanoneedle is grown. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe an intense and highly polarized photoluminescence. Efficient photon anti-bunching was observed up to 220 K, while conserving a normalized anti-bunching dip of at most 36%.