首页> 外文会议>Conference on physics and simulation of optoelectronic devices XVII; 20090126-29; San Jose, CA(US) >High Speed All Optical Logic Gates Based on InAs/GaAs Quantum-Dot Semiconductor Optical Amplifiers
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High Speed All Optical Logic Gates Based on InAs/GaAs Quantum-Dot Semiconductor Optical Amplifiers

机译:基于InAs / GaAs量子点半导体光放大器的高速全光逻辑门

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A scheme to realize fiber-based all-optical Boolean logic functions including XOR, AND, OR and NOT based on a semiconductor optical amplifier with a closely stacked Stranski-Krastanow InAs/GaAs quantum dot layers is proposed. Rate equations is given to describe the population dynamics of the carrier in the device, as well as the nonlinear dynamics including carrier heating and spectral hole-burning. The model is used to simulated the cross gain and cross phase modulation in the device that are related to the logic processes. Results show with QD excited state serving as a carrier reservoir, this type of QD device is suitable for high speed operations with ultra fast carrier and phase relaxation. All optical logic operation can be carried out at up to 250 Gb/s.
机译:提出了一种基于具有紧密堆积的Stranski-Krastanow InAs / GaAs量子点层的半导体光放大器来实现包括XOR,AND,OR和NOT在内的基于光纤的全光学布尔逻辑函数的方案。给出了速率方程式,以描述器件中载流子的总体动力学,以及包括载流子加热和光谱烧孔的非线性动力学。该模型用于模拟与逻辑过程相关的器件中的交叉增益和交叉相位调制。结果表明,以QD激发态作为载流子,这种QD器件适用于具有超快载流子和相位弛豫的高速操作。所有光学逻辑操作均可以高达250 Gb / s的速度执行。

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