Electron Injection Behavior from the Magnesium Electrode into a Family of Electron-Transporting Amorphous Molecular Materials, α,ω-Bis(dimesitylboryl)oligothiophene

摘要

Electron injection behavior from the magnesium (Mg) electrode into a family of electron-transporting amorphous molecular materials, 5,5'-bis(dimesitylboryl)-2,2'-bithiophene (BMB-2T) and 5,5"-bis(dimesityl-boryl)-2,2':5',2"-terthiophene (BMB-3T), in single-layer devices of symmetrical structure was studied. The current density-voltage characteristics of the devices with varying thickness were in agreement with the trap-free space-charge-limited current model. The results suggest that the current is conduction limited and that the contact between BMB-nT (n = 2 and 3) and the Mg electrode is nearly ohmic.