Integrated Multimode Interference Couplers in Silicon-on insulator

摘要

Silicon-on insulator (SOI) is an attractive platform for the fabrication of optoelectronic integrated circuit. Thin cladding layers (<1.0mum) can be used in SOI wavegide due to the large index step between Si and SiO_2, making them compatible with the VLSI technology. Here we demonstrate hte fabrication of 1x4 and 2x2 multimode interference (MMI) coupler based on SI technology. Performances of the devices are analyzed. The minimum excess loss of the devices is about 1.8dB. The devices show uniform power distribution.