Ion implantation of B ions into CdHgTe/CdZnTe substrate and determination of optimum optical characteristics for making diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe

摘要

The samples were prepared from CdZnTe substrate with thickness of 600μm, on wich thin CdHgTe (KRT) thin films with thicknesses of 16μm, 18.75 μm and the same sample with KRT thin film with thickness 21.6μm was coated by diamond thin film with thickness of 30nm. B ion implantation into KRT film on CdZnTe substrate was made with purpose of investigation of volt-ampere characteristics and defects formation. Ion doping of B in KRT with doses of (D=3.4 mCl/cm2, D=6.8 mCl/cm2) and energies (50 keV, 100 keV, 150 keV). The calculations by SRIM-TRIM 2003 software for condition of maximum ion distribution on the interface "film-substrate" have shown that the optimal energy is 100 keV for all mentioned samples. The results also have shown that implantation at ions energy 100 keV is optimal for form diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe.