High Power 14XXnm Pump Lasers for Next Generation

摘要

This paper reviews the recent progress in 14XXnm-band pump lasers of new design concepts. One is the new packaging scheme with integrating multiple laser stripes and a polarization beam combiner, which brings various benefits in cost-performances of the optical amplifier both in EDF (Erbium doped fiber) and Raman configuration. This "hybrid" designed pump lasers offer stable low-DOP (degree of polarization) of 5% with the standing-alone laser package, and demonstrated the potential optical output beyond one watt with the significant saving factor in board-spaces and electrical power consumption. The other is the inner-grating multi-mode (iGM) chip design, which integrates the wavelength stabilizer into the laser stripe and maintains stable multi longitudinal-mode oscillation. The "iGM" laser shows very low RIN (relative intensity noise) less than -150dB/Hz together with suppression of SBS (stimulated Brillouin scattering) in the transmission fiber. We conclude that these new pump lasers, hybrid and iGM lasers, are promising candidates to the 14XXnm-band pump sources for co-propagating Raman-amplifier as well as EDF-amplifiers of next generation.