GaInN light-emitting diodes with omni directional reflectors

摘要

A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN light-emitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarter-wave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GalnN / GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GalnN / GaN LEDs with semitransparent Ni / Au top contacts. The extraction efficiency of ODR-LEDs is higher as compared to conventional LEDs with Ni / Au contacts.