首页> 外文会议>Conference on Light-Emitting Diode Materials and Devices; 20071112-14; Beijing(CN) >Organic White Light-Emitting Diodes Using a New DCM Derivative as a Doping Molecule
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Organic White Light-Emitting Diodes Using a New DCM Derivative as a Doping Molecule

机译:使用新型DCM衍生物作为掺杂分子的有机白光发光二极管

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A new DCM derivative 4-(dicyanomethylene)-2-t-butyl-6-(9-ethylphenothiazine-2-enyl)-4H-pyran (DCPTZ) has been used as an orange-red fluorescent dye molecule in organic light-emitting diodes (OLEDs). EL devices with the structure ITO/PEDOT-PSS/a-NPD/Alq_3:DCPTZ/Alq_3/LiF/Al were fabricated with various DCPTZ doping concentrations. The maxima in the EL spectra of the devices varied from 580 to 620 nm depending on the doping concentration of the dye molecule. An EL device with 0.5% dopant concentration was found to exhibit a maximum brightness of 81,500 cd/m~2 at 13.3 V and a power efficiency of 4.11m/W with CIE coordinates (0.51, 0.47) at a luminance of 100 cd/m~2. White light-emitting devices with the structure ITO/PEDOT-PSS/α-NPD/α-NPD:DCPTZ/DPVBi/Alq_3/ LiF/Al were also fabricated. The thickness of the blue light-emitting 1,4-bis(2,2-diphenylvinyl)benzene (DPVBi) layer was varied to obtain white light emission. White light emission from the device was observed when the thickness of the DPVBi layer was greater than 10 nm. The maximum brightness and power efficiency of the device with a 20 nm DPVBi layer were found to be 30,300 cd/m~2 and 2.0 lm/W respectively, with CIE coordinates (0.33, 0.36). In addition, the white EL device exhibits a relatively high color rendering index (CRI) of about 83.
机译:一种新的DCM衍生物4-(二氰基亚甲基)-2-叔丁基-6-(9-乙基吩噻嗪-2-基)-4H-吡喃(DCPTZ)已被用作有机发光中的橙红色荧光染料分子二极管(OLED)。以各种DCPTZ掺杂浓度制造具有ITO / PEDOT-PSS / a-NPD / Alq_3:DCPTZ / Alq_3 / LiF / Al结构的EL器件。器件的EL光谱最大值取决于染料分子的掺杂浓度,从580 nm到620 nm不等。发现掺杂浓度为0.5%的EL器件在13.3 V时显示最大亮度为81,500 cd / m〜2,在100 cd / m的亮度下具有CIE坐标(0.51、0.47)的功率效率为4.11m / W 〜2。还制造了具有ITO / PEDOT-PSS /α-NPD/α-NPD:DCPTZ / DPVBi / Alq_3 / LiF / Al结构的白光发射器件。改变发蓝色光的1,4-双(2,2-二苯基乙烯基)苯(DPVBi)层的厚度以获得白光发射。当DPVBi层的厚度大于10nm时,观察到来自器件的白光发射。发现具有20 nm DPVBi层的器件的最大亮度和功率效率分别为30,300 cd / m〜2和2.0 lm / W,CIE坐标为(0.33,0.36)。另外,白色EL器件表现出约83的较高的显色指数(CRI)。

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