首页> 外文会议>Conference on Lasers in Material Processing and Manufacturing, Oct 16-18, 2002, Shanghai, China >Laser nanocrystallization of the amorphous silicon with and without metal introduction
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Laser nanocrystallization of the amorphous silicon with and without metal introduction

机译:引入和不引入金属的非晶硅的激光纳米晶化

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摘要

Laser nanocrystallization of the amorphous silicon (a-Si) deposited on Si (100) or glass substrate with and without metal catalyst is investigated. SEM results indicate that the surface morphology is presented as many nanograins are studded on the former's surface after crystallization, whereas, only with plenty of spots scattering on the latter's surface. HRTEM studies show that the nanograins are Si nanocrystallites and the spots are actually crystalline Si nanowires. Further analysis on the crystallizing process of the two kinds of annealing has been performed to explain the morphology difference of two kinds of annealing techniques.
机译:研究了在有金属催化剂和无金属催化剂的情况下,沉积在硅(100)或玻璃基板上的非晶硅(a-Si)的激光纳米晶化过程。 SEM结果表明,在结晶后,许多纳米颗粒散布在前者的表面上,呈现出表面形态,而在后者的表面上仅散布了许多斑点。 HRTEM研究表明,纳米颗粒是Si纳米晶体,斑点实际上是晶体Si纳米线。进一步分析了两种退火的结晶过程,以解释两种退火技术的形态差异。

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