Application of Schottky barrier bolometer arrays to cooled sensors

摘要

We describe a model for cooled thermal imaging sensors, based on silicon Schottky diode bolometer arrays. The sensing mechanism is the modulation of Schottky diode dark current with temperature. The proposed array is identical to Schottky diode arrays, which would be used for uncooled thermal imaging, except for a change of the sensing electrode metal. We separate the thermal and electrical response of the detector elements and discuss sensor limitations related to detector thermal isolation. At a 180 K operating temperature, we project NEDT's in the 3 to 20 mK range, depending upon system fumber. A 20 cm aperture sensor based on this technology should have a noise equivalent power below 10~(-11) watts.