Quantum well infrared photodetector (λ = 3―20 μm) focal plane arrays: monolithic integration with Si-based read-out integrated circuitry for low cost and high performance

摘要

Results of detector characterization are presented for quantum well infrared photodetectors (QWIPs) fabricated from a variety of Ⅲ-Ⅴ material systems lattice-matched to InP substrate. Extremely large responsivities of 33.2 A/W were obtained from GaInAs/InP QWIPs operating at λ = 9 μm which represents to the authors' knowledge the largest value of responsivity for any QWIP in this wavelength range. Devices made from AlGaInAs/InP and GaInAs/AlInAs have also been realized that extend the wavelength range of sensitivity from 3 μm out to 20 μm while remaining lattice-matched to InP. Lattice-matched multispectral detectors are demonstrated for sensitivity at both 4 μm and 8.5 μm. Localized epitaxy of GalnAs/InP superlattice structures lattice-matched to InP was performed on Si substrate for the purpose of monolithic integration of Ⅲ-Ⅴ QWIPs with Si-based read-out integrated circuitry.