X-ray Spectral Measurements of the JMAR High Power Laser-plasma Source

摘要

X-ray spectra of Cu plasmas at the focus of a four-beam, solid-state diode-pumped laser have been recorded. This laser-plasma X-ray source is being developed for JMAR's lithography systems aimed at high-performance semiconductor integrated circuits. The unique simultaneous overlay of the four sub-nanosecond laser beams at 300 Hertz produces a bright, point-plasma X-ray source. PIN diode measurements of the X-ray output indicate that the conversion efficiency (ratio of X-ray emission energy into 2π steradians to incident laser energy) was approximately 9 percent with average X-ray power yields of greater than 10 Watts. Spectra were recorded on calibrated Kodak DEF film in a curved-crystal spectrograph. A KAP crystal (2d = 26.6 Angstroms) was used to disperse the 900 eV to 3000 eV spectral energies onto the film. Preliminary examination of the films indicated the existence of Cu and Cu XX ionization states. Additional spectra as a function of laser input power were also recorded to investigate potential changes in X-ray yields. These films are currently being analyzed. The analysis of the spectra provide absolute line and continuum intensities, and total X-ray output in the measured spectral range.