首页> 外文会议>Conference on Active Materials: Behavior and Mechanics Mar 3-6, 2003 San Diego, California, USA >Effect of crystal structure on magnetic-field-induced strain in Ni-Mn-Ga
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Effect of crystal structure on magnetic-field-induced strain in Ni-Mn-Ga

机译:晶体结构对Ni-Mn-Ga中磁场感应应变的影响

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摘要

Magnetic shape memory materials are expected to have a high potential in practical applications. Several ferromagnetic materials exhibiting the large magnetic-field-induced strain have been found in recent years. The largest field-induced strain is observed in Ni-Mn-Ga system. The most important experimental results on crystal structure, magnetic anisotropy and twinning stress of martensitic phases in Ni-Mn-Ga having tetragonal five-layered, orthorhombic seven-layered and tetragonal non-layered crystal structures are reported. Depending on the martensite crystal structure Ni-Mn-Ga alloys are able to show a really giant strain response (approximately 6% in tetragonal five-layered or 10% in orthorhombic seven-layered martensitic phase) in a magnetic field less than 1 T. Contrary to these two phases, a detectable field-induced strain is not observed in non-layered tetragonal martensitic phase in Ni-Mn-Ga system. Effect of crystal structure is in a good agreement with calculation of the magnetic-field-induced strain based on the model developed by authors. The effect of composition on appearance of undesirable non-layered tetragonal martensitic phase in Ni-Mn-Ga system is discussed based on the new experimental results.
机译:磁性形状记忆材料有望在实际应用中具有很高的潜力。近年来已经发现了几种表现出大的磁场感应应变的铁磁材料。在Ni-Mn-Ga系统中观察到最大的场致应变。报道了具有四方五层,正交七层和四方非层状晶体结构的Ni-Mn-Ga中马氏体相的晶体结构,磁各向异性和孪晶应力的最重要实验结果。取决于马氏体晶体结构,Ni-Mn-Ga合金能够在小于1 T的磁场中显示出真正巨大的应变响应(四方五层约占6%,正交晶七层马氏体占约10%)。与这两个阶段相反,在Ni-Mn-Ga系统的非分层四方马氏体相中未观察到可检测的场感应应变。根据作者开发的模型,晶体结构的影响与磁场感应应变的计算非常吻合。基于新的实验结果,探讨了组成对Ni-Mn-Ga体系中不希望出现的非层状四方马氏体相的影响。

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