首页> 外文会议>China-Japan Bilateral Symposium on Shape Memory Alloys November 4-7, 1997 Hangzhou; China >Effect of Crystalization Temperature on Phase Transformation in Ti-Rich NiTi Thin Films
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Effect of Crystalization Temperature on Phase Transformation in Ti-Rich NiTi Thin Films

机译:结晶温度对富钛NiTi薄膜相变的影响

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The effect of crystallization annealing temperature on the phase transformation temperature in Ti-rich NiTi thin films prepared by the magnetron-sputtering system has been sutuded. The experiemntal resuts shown that the phase transforation sequence of Ti-rich NiTi thin films are P-R-M for cooling transformation and R-P and M-P for heating one. while ncreasing the annealing temperature from 823K to 1103K , the R-phae transformation temperature T_p-r and T_r-p are nearly no change. the martensitic transformation temperatures. however, move to higher temperature. A thin film with micro-structure consisting of almost whole R-phase at room teperature can be obtained by annealing at an approprate teperature (e.g. at 923
机译:研究了磁控溅射系统制备的富钛NiTi薄膜中结晶退火温度对相变温度的影响。实验结果表明,富钛NiTi薄膜的相变顺序为P-R-M进行冷却转变,R-P和M-P进行加热转变。在将退火温度从823K提高到1103K的同时,R相转变温度T_p-r和T_r-p几乎没有变化。马氏体转变温度。但是,请提高温度。通过在适当的温度下退火(例如在923°C),可以获得具有几乎在室温下几乎整个R相组成的微观结构的薄膜。

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