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Broadband and highly efficient grating couplers for silicon-basedhorizontal slot waveguides

机译:硅基水平缝隙波导的宽带高效光栅耦合器

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Optical nonlinear effects have been widely studied in III-V semiconductor photonics. However, nonlinear performance in silicon photonics is still inefficient. An alternative silicon-based waveguide configuration, which is known as slot waveguide, has been recently proposed to improve the nonlinear performance in a very efficient way. In the slot waveguide, the fundamental mode light is highly confined in a very small region, which is called slot, of a low index contrast material between two silicon high index contrast layers. This enables the introduction of new silicon photonic devices in which the characteristics of active optical materials can be efficiently exploited for modulation, switching, sensing, and other applications. Horizontal and vertical slot waveguides for optimum nonlinear performance have been recently proposed. However, the horizontal slot waveguide is more feasible for nonlinear applications. To increase nonlinear performance in the horizontal slot region, silicon nanocrystals (Si-nc) embedded in silica (SiO_2) have been proposed to fill the slot region between the two silicon layers. It is achievable nonlinear performance in the horizontal slot region for down to 50nm thick slots. However, the lower the slot thickness is, the more difficult the coupling to fiber results. One of the most developed silicon photonics efficient vertical coupling techniques is the grating coupler. We demonstrate grating couplers for efficient coupling between horizontal slot waveguides and standard single mode fibers. Broadband and highly efficient horizontal slot waveguide grating couplers have been obtained by means of simulations. These grating couplers configuration are suitable for nonlinear performance in silicon photonics. It is achieved 61% maximum coupling efficiency for λ= 1550 nm and TM polarization. Furthermore, a 35 run 1dB-bandwidth is achievable for the designed grating couplers.
机译:在III-V半导体光子学中已经广泛研究了光学非线性效应。但是,硅光子学中的非线性性能仍然无效。最近已经提出了另一种基于硅的波导配置,称为缝隙波导,以非常有效的方式改善非线性性能。在缝隙波导中,基本模式光被高度限制在两个硅高折射率对比层之间的低折射率对比材料的非常小的区域(称为缝隙)中。这使得能够引入新的硅光子器件,其中可以有效地利用活性光学材料的特性进行调制,切换,传感和其他应用。最近已经提出了用于最佳非线性性能的水平和垂直缝隙波导。但是,水平缝隙波导对于非线性应用更为可行。为了增加水平缝隙区域的非线性性能,已经提出了嵌入二氧化硅(SiO_2)中的硅纳米晶体(Si-nc)填充两个硅层之间的缝隙区域。对于低至50nm厚的缝隙,它在水平缝隙区域中可实现的非线性性能。但是,缝隙厚度越小,与光纤的耦合就越困难。光栅耦合器是最先进的硅光子学有效的垂直耦合技术之一。我们演示了光栅耦合器,用于水平缝隙波导和标准单模光纤之间的有效耦合。通过仿真已经获得了宽带和高效的水平缝隙波导光栅耦合器。这些光栅耦合器配置适用于硅光子学中的非线性性能。对于λ= 1550 nm和TM偏振,可获得61%的最大耦合效率。此外,对于设计的光栅耦合器,可实现35 run 1dB的带宽。

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