首页> 外文会议>Carbon nanostructures: fullerenes to graphene >Non-Volatile Memory Based on Polymer-Suspended Graphene Nanoplatelets with Fractional and Integer Quantum Conductance at 300K and Zero Magnetic Field
【24h】

Non-Volatile Memory Based on Polymer-Suspended Graphene Nanoplatelets with Fractional and Integer Quantum Conductance at 300K and Zero Magnetic Field

机译:基于聚合物悬浮的石墨烯纳米片的非易失性存储器,在300K和零磁场下具有分数和整数的量子电导率

获取原文
获取原文并翻译 | 示例

摘要

Quantized conductance is observed at room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. In devices with medium concentration of graphene platelets, integer multiples of conductance G_o=2e~2/h (=12.9 kΩ)~(-1) are observed. In some devices partial quantized conductance steps are observed, including a series with (n/7)×G_o steps. As an organic memory, the device exhibits reliable memory operation with an ON/OFF ratio of more than 10. We attribute the quantized conduction to the existence of a 1D electron waveguide along the conductive path. Such a memory device can be viewed as a realization of a quantum memristor.
机译:在室温下,在石墨烯亚微米级纳米片中嵌入3-己基噻吩(P3HT)聚合物层的金属-绝缘体-金属结构中观察到了定量电导。在石墨烯血小板浓度中等的器件中,观察到电导的整数倍G_o = 2e〜2 / h(= 12.9kΩ)〜(-1)。在某些设备中,观察到部分量化的电导阶跃,包括具有(n / 7)×G_o阶跃的序列。作为有机存储器,该器件以超过10的开/关比表现出可靠的存储操作。我们将量化的传导归因于沿着传导路径存在一维电子波导。这样的存储设备可以被视为量子忆阻器的实现。

著录项

  • 来源
  • 会议地点 Phoenix AZ(US)
  • 作者单位

    Electrical Engineering Department, Virginia Tech, Blacksburg, VA 24061, USA ,Nanosonic Inc, Pembroke, VA 24061, USA;

    Nanosonic Inc, Pembroke, VA 24061, USA;

    Physics Department, Virginia Tech, Blacksburg, VA 24061, USA;

    Electrical Engineering Department, Virginia Tech, Blacksburg, VA 24061, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号