首页> 外文会议>ASME conference on smart materials, adaptive structures and intelligent systems 2008 >SURFACE SEGREGATION OF SULFUR AND ITS EFFECT ON SURFACE-ENERGY- INDUCED SELECTIVE GRAIN GROWTH IN MAGNETOSTRICTIVE FE-GA-B ALLOY
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SURFACE SEGREGATION OF SULFUR AND ITS EFFECT ON SURFACE-ENERGY- INDUCED SELECTIVE GRAIN GROWTH IN MAGNETOSTRICTIVE FE-GA-B ALLOY

机译:磁化Fe-GA-B合金中硫的表面偏析及其对表面能诱导的选择性晶粒长大的影响

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The surface-energy-induced selective grain growth with a specific plane can be governed in polycrystalline Fe-Ga-B alloys doped with sulfur. The segregated sulfur during texture annealing played an important role in controlling the surface energy to induce the selective growth of {100} or {110} grains, corresponding to maximum magnetostrictive performance, along <001> orientation with respect to rolling direction. The results show that sulfur diffuses (adsorbs) from bulk interior (sulfur atmosphere) then segregates on the surface. The amount of segregated sulfur increases with an increase of annealing time at the temperature of 1200℃. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) data on the surface as well as selective development of {100}<001> and {110}<001> preferred textures are presented in this work. The XPS fitted peaks of S 2p_(3/2) at binding energy of 161.2 and 163.2 eV for annealed Fe-Ga-B doped with sulfur represent the presence of stoichiometric FeS and FeS_n (polysulfide), respectively. For all of the sulfur-free Fe-Ga-B sheets annealed in the ampoule with sulfur element, XPS indicated contributions centered at approximately 161.7 (S 2p) that has been assigned to iron sulfide as well. The presence of FeS was clearly confirmed by XRD patterns and XPS fitted peak positions at 161.5 eV (S 2p_(3/2)) and 710.2 eV (Fe 2p_(3/2)). The segregation of sulfur and boron during annealing were also confirmed by AES depth profile results, which exhibited peak concentrations of 10 at.%S and 20 at.%B at the surface, respectively. The peak magnetostriction of 201 ppm was obtained at annealed (Fe_(81.3)Ga_(18.7))_(99)B_1 alloy with near {100}<001> orientation under sulfur atmosphere containing the amounts of 6.4 mg S. On the other hand, the texture of sulfur-free Fe-Ga-B alloy was close to {110}<001> after annealing at 1200℃ for 6h under flowing argon, corresponding to the magnetostriction of 160 ppm.
机译:表面能诱导的具有特定平面的选择性晶粒生长可以在掺杂硫的多晶Fe-Ga-B合金中得到控制。织构退火过程中偏析的硫在控制表面能以诱导沿相对于轧制方向的<001>方向选择性生长{100}或{110}晶粒(对应于最大磁致伸缩性能)方面起着重要作用。结果表明,硫从整体内部(硫气氛)扩散(吸附),然后在表面分离。在1200℃温度下,随着退火时间的增加,偏析硫的含量增加。在这项工作中介绍了表面俄歇电子能谱(AES)和X射线光电子能谱(XPS)数据以及{100} <001>和{110} <001>首选纹理的选择性展开。掺杂硫的Fe-Ga-B的XPS拟合峰在结合能为161.2和163.2 eV时,S 2p_(3/2)分别代表化学计量的FeS和FeS_n(多硫化物)。对于所有在安瓿瓶中退火并带有硫元素的无硫Fe-Ga-B薄板,XPS的贡献集中在大约161.7(S 2p)上,这也已被指定为硫化铁。 XS谱图和XPS拟合峰位置分别在161.5 eV(S 2p_(3/2))和710.2 eV(Fe 2p_(3/2))上明确证实了FeS的存在。 AES深度分布结果也证实了退火过程中硫和硼的偏析,其表面的峰浓度分别为10 at。%S和20 at。%B。在含有6.4 mg S的硫气氛下,经退火的(Fe_(81.3)Ga_(18.7))_(99)B_1合金在{100} <001>取向附近进行退火,可获得201 ppm的峰值磁致伸缩。 ,在流动的氩气中于1200℃退火6h后,无硫的Fe-Ga-B合金的织构接近{110} <001>,对应于160 ppm的磁致伸缩。

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