首页> 外文会议>ASME(American Society of Mechanical Engineers) Pressure Vessels and Piping Conference 2006 vol.2: Computer Technology >Dynamic Relaxation and New Periodic Symmetry Technique for Simulating Interactions Between Dislocations
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Dynamic Relaxation and New Periodic Symmetry Technique for Simulating Interactions Between Dislocations

机译:动态弛豫和新的周期性对称技术来模拟位错之间的相互作用

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Studies of the interaction between two edge dislocations have been carried out by coupled Dynamic Relaxation (DR) technique, the Embedded Atom method (EAM) potential function and a newly developed periodic symmetry method. The effects of boundary conditions and external tractions are examined for the case of edge dislocations with the same or opposite Burgers vectors gliding on physically the same planes, and for dislocations with opposite Burgers vectors gliding on parallel planes. The results show that as expected, edge dislocations dissociate into Shockley partials to minimize their energy. Depending upon the sign of the Burgers vector of component dislocations, various defect configurations are obtained after the relaxation. A more stable defect configuration replaces the well-known structure of the perfect dipole when the distance between the slip planes decreases. This leads to the formation of faulted dipoles in Z configuration. The relaxation results depend upon parameters such as dipole height, initial dipole configuration and also external tractions applied to the system. These parameters together with the atomistic mechanism of transformation of perfect dipole into the Z dipole are studied. The suitability of the technique for simulating complex defect structures in crystalline material is discussed.
机译:通过耦合动态弛豫(DR)技术,嵌入式原子方法(EAM)势函数和新开发的周期性对称方法对两个边缘位错之间的相互作用进行了研究。对于边界错位的情况,在相同或相反的Burgers向量在物理上相同的平面上滑动时,检查边界条件和外部牵引力的影响;对于相反的Burgers向量在平行的平面上滑动,在错位的情况下进行检查。结果表明,如预期的那样,边缘位错解离为Shockley部分,以最小化它们的能量。取决于部件位错的Burgers矢量的符号,在松弛之后获得各种缺陷构型。当滑移面之间的距离减小时,更稳定的缺陷配置将替代理想的偶极子结构。这导致在Z配置中形成故障偶极子。弛豫结果取决于参数,例如偶极高度,初始偶极配置以及应用于系统的外部牵引力。研究了这些参数以及完美偶极子向Z偶极子转变的原子机理。讨论了在晶体材料中模拟复杂缺陷结构的技术的适用性。

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