This study focuses on the evolution under illumination of the efficiency of multicrystalline silicon solar cells made of metallurgical grade silicon. First, we calculated the activation energy of BOi2 defect generation and annihilation from efficiency measurements and compared with previous values deterimined by Minority carrier lifetime and open-circuit voltage measurements, the results are much consistent. Then we shown via external quantum efficiency measurements that this material is sensitive to light-induced degradation effects due to the formation of BOi2 defects and the dissociation of iron-boron pairs, and the former is the major fator. Finally, we discussed how to reduce the light-induced degradation.
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