High – speed, 2D VCSEL arrays at 990nm for short reach interconnects

摘要

We have demonstrated high density, 2D (4x12) VCSEL arrays operating at an aggregate data rate of over480Gb/s in an aerial density of 1400x3750 μm2, or 9.14 Tbs/cm2. These flip-chip, bottom-emitting 990nmVCSELs have low drive voltage, low electrical parasitics, improved thermal impedance and 2Dscalability over their wire-bonded top emitting counterparts. Excellent high speed performance wasobtained through the use of 1) compressively strained InGaAs MQW active region 2) low parasiticcapacitance oxide-confined VCSEL structures and 3) low series resistance, high index contrastAlGaAs/GaAs mirrors. 10Gb/s operation was obtained with low operating current density of ~6kA/cm2at 70oC. Our best results to date have achieved data rates greater than 15Gb/s @70oC at a current densityless than 10kA/cm2. The device results show good agreement with theoretically calculated/simulatedvalues.