Conventional wisdom that the SiC JFET is only a normally on device has recently been superseded by the first practical normally off SiC JFET. This new true enhancement mode, three-terminal, pure-SiC design provides designers with a normally off solution that retains all the benefits of the normally on SiC JFET. With only a simple change in series gate impedance, the EM SiC JFET can be used with common IC drivers and is a drop-in replacement for current silicon power devices in most applications. The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper demonstrates the drop-in replacement of 4 IGBTs with 4 normally off SiC JFET in a commercially available solar inverter based on a full-bridge topology. While demonstration as a drop-in replacement device was the main goal, system efficiency for operation with each device was observed and compared and an immediate improvement observed for the SiC JFET.
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机译：SiC JFET只是常开器件的传统观点最近被第一个实用的常闭SiC JFET所取代。这种全新的真正增强模式，三端子纯SiC设计为设计人员提供了常关型解决方案，该方案保留了常开SiC JFET的所有优势。只需简单地改变串联栅极阻抗，即可将EM SiC JFET与常见的IC驱动器一起使用，并且可以在大多数应用中替代当前的硅功率器件。常关型SiC JFET的器件特性优于MOSFET和IGBT，并具有通过减少传导和开关损耗来提高效率的可能性。本文介绍的工作演示了在基于全桥拓扑的市售太阳能逆变器中，用4个常关SiC JFET替代4个IGBT的直接替换。尽管演示的目的是作为嵌入式替代设备，但观察并比较了每种设备的系统运行效率，并观察到SiC JFET的立竿见影的改进。
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