High-peak-power narrow-bandwidth laser pulse generation from semiconductor lasers

摘要

High-peak-power smooth-shaped and narrow-bandwidth optical pulses in sub-nanosecond and nanosecond regions have many applications such as LiDAR, bio-imaging, and material processing. However, at present, there are no good lasers to generate such optical pulses with simple operation. Gain-switched laser diode (GS-LD) is commonly used to generate short pulses (<100ps) with a peak-power of tens of milliwatt . In this paper, we describe a study to generate high-peak-power (～1W) smooth-shaped optical pulses having a temporal duration of sub-nanosecond to a few nanoseconds by intensive GS operation under CW laser light injection.