ENSURING HIGH YIELD AND GOOD RELIABILITY FOR MASS-PRODUCED HIGH-PERFORMANCE HALL EFFECT SENSORS

摘要

We demonstrate the manufacturability of a very simple yet very sensitive GaAs PHEMT-based Hall sensor for home power metering applications. Initial poor Ohmic contacts were ameliorated by minimizing thermal excursions for the wafer after contacting the Ohmics. Extensive reliability testing was concluded and shows an expected failure rate of 0.01 FIT at their maximum operating temperature of 85 ℃.