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PIEZOELECTRIC ACTUATING SPRAYED PHASE-CHANGE COOLING TECHNIQUE FOR VLSI CHIPS

机译:用于VLSI芯片的压电致动喷雾相变冷却技术

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摘要

To develop high performance cooling systems for high heat generation electronic devices, such as CPU, the spray cooling technique using piezoelectric (PZT) actuator in vacuum with its experimental results will be described. The water droplets were ejected through an circular orifice array membrane vibrating at high frequency bending mode which was excited by a ring-shape PZT actuator. Two parts of experiment has been conducted that including the driving conditions for PZT and the heat transfer of the micro scale water droplet. Furthermore, the maximum heat transfer rate has been evaluated at different ambient pressure. The cooling capability at a wide range of operation conditions was measured. The experimental results indicate that the stability of the spray flow rate will affect the heat transfer rate dra- matically. In our experiment, the water was used as the coolant and 30 μm diameter orifice array. At a flow rate of 1.2 ml/min will remove the heat over 50.3 W/cm~2, and the copper surface would be 123.18℃. When vacuum technique is used to reduce the operation pressure to 21.33 kPa, the copper surface temperature can decrease to 85.78℃ at 50.3 W/cm~2 heat flux. The described cooling technique demonstrates competitive potential for next generation cooling for CPU applications.
机译:为了开发用于CPU等高发热电子设备的高性能冷却系统,将描述在真空中使用压电(PZT)致动器的喷雾冷却技术及其实验结果。水滴通过以高频弯曲模式振动的圆孔阵列膜喷出,该圆孔阵列膜由环形PZT致动器激发。已经进行了两部分实验,包括PZT的驱动条件和微尺度水滴的传热。此外,已经在不同的环境压力下评估了最大传热速率。测量了在各种操作条件下的冷却能力。实验结果表明,喷雾流量的稳定性会显着影响传热速率。在我们的实验中,水被用作冷却剂和直径为30μm的孔板阵列。以1.2 ml / min的流速将带走50.3 W / cm〜2的热量,铜表面将达到123.18℃。当使用真空技术将操作压力降低到21.33 kPa时,在50.3 W / cm〜2的热通量下,铜的表面温度可以降低到85.78℃。所描述的冷却技术展示了用于CPU应用的下一代冷却技术的竞争潜力。

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