Structural Improvement of 920 nm Optically Pumped Semiconductor Vertical External-cavity Surface Emitting Laser (OPS-VECSEL)

摘要

920 nm OPS-VECSEL has an important application in laser display. We constructed and optimized a 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) with active region of In_(0.09)Ga_(0.91) As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device, especially the mode, the threshold and the optical-optical translation efficiency, were analyzed by dealing with different numbers of QWs (1,2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose the best structure of them. On this basis, we optimized the external cavity mirrors reflectivity and the simulation showed that the performances would be significantly increased.