Department of Physics, School of Sciences, Gujarat University, Ahmedabad-380 009;
Department of Physics, School of Sciences, Gujarat University, Ahmedabad-380 009;
RRAM; Resistance switching; Manganite; Chemical Solution Deposition;
机译:La_(0.7)Sr_(0.3)MnO_3,Lao_(0.7)Ca_(0.3)MnO_3和Pr_(0.7)Ca_(0.3)MnO_3系统的临界指数显示出传输和磁性能之间的相关性
机译:La_(0.14)Pr_(0.56)Sr_(0.3)MnO_3 / SrTiO_3和La_(0.7)Ca_(0.3)MnO_3 / Gd_(0.7)Ca_(0.3)MnO_3多层中的非铁磁绝缘界面区域
机译:外延Pr_(0.7)Sr_(0.3)MnO_3 / La_(0.5)Ca_(0.5)MnO_3 / Pr_(0.7)Sr_(0.3)MnO_3三层的表面和界面结构的表征
机译:基质对PR_(0.7)CA_(0.3)MnO_3的忆子切换的影响
机译:压电瘤应用Pb(Zr0.3Ti0.7)O3薄膜对缩放效应对缩放效应的影响
机译:基于区域依赖的PR0.7CA0.3MNO3的忆序器件作为尖峰和人工神经网络的突触
机译:磁性假晶外延薄膜的磁性 在不同的双轴拉伸应力下,pr_ {0.7} Ca_ {0.3} mnO_3