• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Advances in Abrasive Technology XI >Study on adhesion removal model in CMP SiO_2 ILD
【24h】

Study on adhesion removal model in CMP SiO_2 ILD

机译：CMP SiO_2 ILD附着力去除模型的研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the process of CMP SiC>2 ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO_2 ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.
机译：在CMP SiC> 2 ILD过程中，浆料中具有高表面能的纳米粒子对CMP的效率和质量具有至关重要的影响。本文分析了SiO_2ILD表面纳米颗粒的模式，建立了相应的吸附力去除模型。通过循环抛光实验，用TEM和Zeta电位分析仪观察了抛光前后纳米颗粒尺寸和颗粒表面状态的变化，在此基础上验证了附着力去除模型。

著录项

  • 来源
  • 会议地点 Hyogo(JP)
  • 作者

    D.M.Guo; R.H.Liu; R.K.Kang; Z.J.Jin;

  • 作者单位

    Key Laboratory for Precision Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology, Dalian 116024, P.R.China;

    Key Laboratory for Precision Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology, Dalian 116024, P.R.China;

    Key Laboratory for Precision Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology, Dalian 116024, P.R.China;

    Key Laboratory for Precision Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology, Dalian 116024, P.R.China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

    silicon dioxide; chemical-mechanical polishing (CMP); slurry; adhesion removal;

    机译：二氧化硅;化学机械抛光（CMP）；泥浆;去除粘连;
  • 入库时间 2022-08-26 14:05:07

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号