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Enhanced heat transfer characteristics and performance of composite thermoelectric devices

机译:复合热电器件增强的传热特性和性能

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Thermoelectric elements made of semiconductor slices layered onto highly conducting inter-connector materials are termed as Composite Thermoelectric Device (CTED). An integrated TED (iTED) is a CTED with flow channels drilled through an inter-connector, it acts as a heat exchanger, directing the heat transfer between the fluid stream and element legs. In this work, thermoelectric performance of such elements in terms of power output Po, heat input Q_h, conversion efficiency n, electric current and Ohmic and Seebeck voltages for various hot surface temperatures T_h, load resistances R_L and semiconductor slice sizes d has been investigated using both analytical and numerical methods. The thermoelectric performance of CTED has been compared with a geometrically equivalent conventional TED element. For an optimum load resistance R_(optmL), an increase in T_h showed a substantial increase in P_0 and a minor increase in Q_h. At T_h = 550K and 350 K, the optimum n, for CTED, 11% and 9% respectively lesser and nearly four-fold increase in P_0 as compared to the conventional TED is observed. The semiconductor slice size d has a significant effect on the CTED performance: an observed increase in both P_0 and Q_h and decrease in η is a result of decreasing d. At fixed d = 5 mm and hot stream inlet temperature (450 K) values, the single-stage iTED showed five-times in P_0 and two-fold in η for a flow rate Re = 500 compared to the values at Re = 100. These novel TEDs help extract larger amounts of waste heat, reduce thermal stresses and minimize semiconductor material usage as compared to conventional TEDs.
机译:由层叠在高导电互连材料上的半导体切片制成的热电元件称为复合热电器件(CTED)。集成TED(iTED)是CTED,其流体通道通过互连器钻出,它充当热交换器,指导流体流和元件支腿之间的热传递。在这项工作中,已经使用以下方法研究了这些元件在功率输出Po,热输入Q_h,转换效率n,电流以及各种热表面温度T_h,负载电阻R_L和半导体切片尺寸d的欧姆和塞贝克电压方面的热电性能分析和数值方法。已将CTED的热电性能与几何等效的传统TED元件进行了比较。为了获得最佳的负载电阻R_(optmL),T_h的增加表明P_0显着增加,而Q_h则略有增加。在T_h = 550K和350 K时,与传统的TED相比,对于CTED的最佳n值,P_0分别减小了11%和9%,几乎增加了四倍。半导体切片尺寸d对CTED性能有重大影响:观察到的P_0和Q_h的增加以及η的减少是d减小的结果。在固定的d = 5 mm和热流入口温度(450 K)的值下,与Re = 100的值相比,单级iTED在流速Re = 500时在P_0中显示五倍,在η中显示两倍。与传统的TED相比,这些新颖的TED有助于提取大量废热,降低热应力并使半导体材料的使用降至最低。

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