首页> 外文会议>9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001), Sep 30-Oct 3, 2001, S. Tecla, Italy >Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation
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Three-Dimensional Emitter Based on Locally Enhanced Diffusion (TREBLE) Structure: Modeling and Formation

机译:基于局部增强扩散(TREBLE)结构的三维发射极:建模和形成

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Here we present a new concept called TREBLE, ThRee-dimensional Emitter Based on Locally Enhanced diffusion, that can be applied to fine-grained polycrystalline silicon solar cells. The concept makes use of the columnar structure of polycrystalline layers and of preferential doping created by dopants diffusion along grain boundaries during formation of the emitter. We first experimental data on phosphorus diffusion in our polysilicon materials and on the carrier collection on such pc-Si based cells. The spectral responses indicates that collection is dominated by the emitter's three dimensional structure. Then, we present a two-dimensional device simulation of an ideal cell using a 2D simulator ISE-DESSIS with the junction depth along grain boundaries (X_(gb)) as the main parameter. The calculations show that cell efficiencies up to 10% for quite high X_(gb) values (> 4μm) are expected on such highly defective polysilicon material.
机译:在这里,我们提出了一个新概念,称为TREBLE,基于局部增强扩散的三维发射极,可以应用于细粒度的多晶硅太阳能电池。该概念利用了多晶层的柱状结构以及在发射极的形成过程中由掺杂剂沿着晶界扩散所产生的优先掺杂。我们首先获得有关多晶硅材料中磷扩散以及此类基于pc-Si的电池上载流子收集的实验数据。光谱响应表明收集主要由发射器的三维结构决定。然后,我们使用二维仿真器ISE-DESSIS,以沿晶界的结深(X_(gb))为主要参数,对理想单元进行了二维设备仿真。计算表明,在这种高度缺陷的多晶硅材料上,对于相当高的X_(gb)值(>4μm),有望达到高达10%的电池效率。

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