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Diffusion of ~(71)Ge in Molybdenum Disilicide

机译:〜(71)Ge在二硅化钼中的扩散

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The radiotracer ~(71)Ge was used to study diffusion in oriented single crystals of MoSi_2 . Ge was chosen in order to simulate Si self-diffusion. ~(71)Ge was produced by neutron activation and implanted below the sample surface. Diffusion was measured for two different oriem ations of single crystals with the tetragonal C11_b crystal structure. The diffusion annealings were carried out in a temperature range of 900 K to 1250 K. We found a surprisingly fast Ge diffusion and a relatively high anisotropy between both principal directions of the crystal. Diffusion perpendicular to the tetragonal axis is about a factor of 5 faster than parallel to the axis. The activation enthalpies are very similar for both principal directions: Q = 190 +- 5 kJmol~(-1) for <100> and Q = 196 +- 3 kJmol~(-1) for <001>.
机译:用放射性示踪剂〜(71)Ge研究了MoSi_2定向单晶中的扩散。选择Ge是为了模拟Si的自扩散。 〜(71)Ge是通过中子活化产生的,并植入样品表面下方。测量了具有C11_b四方晶结构的单晶的两个不同取向的扩散。扩散退火是在900 K至1250 K的温度范围内进行的。我们发现,出乎意料的快速Ge扩散和晶体两个主要方向之间的相对较高的各向异性。垂直于四方轴的扩散比平行于四方轴的扩散快约5倍。激活焓在两个主要方向上非常相似:对于<100>,Q = 190 + -5 kJmol〜(-1),对于<001>,Q = 196 + -3 kJmol〜(-1)。

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