Polariton lifetime effects on resonant Raman scattering in II-VI semiconductor microcavities

摘要

The polariton modes of II-VI cavities consisting of CdTe QW'srnembedded in Cd 0.8 Mn 0.2 Te spacers and cladded between twornCd 0.4 Mg 0.6 Te/Cd 0.75 Mn 0.25 Te distributed Bragg reflectors, are studied byrnmeans of resonant Raman scattering. Results in strongly coupled cavityrnsamples of varying mode-splitting (～11-20 meV) are reported. Thernintensity of the Raman line corresponding to the CdTe QW's LO phononrnand resonant with the upper polariton mode is followed as a function ofrncavity- exciton detuning and temperature. The effect on the Ramanrnefficiency of the polariton lifetime due to scattering with continuumrnexcitons and with acoustic phonons is analysed.