首页> 外文会议>26th European Solid-State Circuits Conference, Sep 19-21, 2000, Stockholm, Sweden >A 900MHz/1.9GHz Integrated Transceiver and Synthesizer IC for GSM
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A 900MHz/1.9GHz Integrated Transceiver and Synthesizer IC for GSM

机译:用于GSM的900MHz / 1.9GHz集成收发器和合成器IC

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An integrated GSM compliant 2.7V, 900MHz/1.9GHz dual band transceiver with an I and Q interface including a dual integer N synthesizer is presented. The receiver provides a total of 110dB of gain range with 80dB of programmable gain range at IF selectable in steps of 2dB and 30dB of programmable gain range in the baseband selectable in steps of 10dB. An on-chip track and hold based DC offset correction scheme is provided to remove DC offsets before each receive slot in a GSM application. An on chip VHF oscillator achieves a phase noise level of -106dBc/Hz at 100kHz offset when operating at 800MHz and the synthesizer provides a close-in phase noise performance of better than -78dBc/Hz at 1kHz offset. The frequency translation loop based transmit section achieves an unwanted sideband suppression of -40dBc, LO leakage of -42dBc, and third order spurious rejection of -69dBc. The transmit output noise level is -165dBc/Hz at a 20MHz offset from the carrier.
机译:提出了一种集成的,符合GSM标准的2.7V,900MHz / 1.9GHz双频段收发器,该收发器具有I和Q接口,包括一个双整数N合成器。接收器提供总共110dB的增益范围,其中IF时80dB的可编程增益范围可以2dB的步长选择,而基带中30dB的可编程增益范围则可以10dB的步长选择。提供了基于片上跟踪和保持的DC偏移校正方案,以消除GSM应用中每个接收时隙之前的DC偏移。当工作在800MHz时,片上VHF振荡器在100kHz偏移时达到-106dBc / Hz的相位噪声电平,并且该合成器在1kHz偏移时提供的近相位噪声性能优于-78dBc / Hz。基于频率转换环路的发射部分可实现-40dBc的无用边带抑制,-42dBc的LO泄漏和-69dBc的三阶杂散抑制。发射输出噪声电平为-165dBc / Hz,偏离载波20MHz。

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