SAMS Multi-Layout Memory: Providing Multiple Views of Data to Boost SIMD Performance

摘要

We propose to bridge the discrepancy between data representations in memory and those favored by the SIMD processor by customizing the low-level address mapping. To achieve this, we employ the extended Single-Affiliation Multiple-Stride (SAMS) parallel memory scheme at an appropriate level in the memory hierarchy. This level of memory provides both Array of Structures (AoS) and Structure of Arrays (SoA) views for the structured data to the processor, appearing to have maintained multiple layouts for the same data. With such multi-layout memory, optimal SIMDization can be achieved. Our synthesis results using TSMC 90nm CMOS technology indicate that the SAMS Multi-Layout Memory system has efficient hardware implementation, with a critical path delay of less than Ins and moderate hardware overhead. Experimental evaluation based on a modified IBM Cell processor model suggests that our approach is able to decrease the dynamic instruction count by up to 49% for a selection of real applications and kernels. Under the same conditions, the total execution time can be reduced by up to 37%.