首页> 外文会议>20th Capacitor and Resistor Technology Symposium, 20th, Mar 6-10, 2000, Huntington Beach, California >ROCK SOLID AND UNDER 10 m Ω - NEW HEAT AND MOISTURE-STABLE, LOW-ESR TANTALUM CHIP CAPACITORS
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ROCK SOLID AND UNDER 10 m Ω - NEW HEAT AND MOISTURE-STABLE, LOW-ESR TANTALUM CHIP CAPACITORS

机译:坚硬且低于10 mΩ的岩石-新型热稳定且低水分的钽屑芯片

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A tantalum chip capacitor having equivalent series resistance (ESR) less than 18 m Ω was described last year at the 19th Capacitor and Resistor Technology Symposium. The technological forces that drove the development of this device were detailed in that paper and a prediction was made that ESR requirements would fall by half every 1 to 1.5 years if the trends of the last 5 years were to continue. Also it was predicted that the ESR of individual capacitors would have to fall at least this quickly if a manufacturer wished to remain competitive The demand for capacitors having ever-lower ESR continues unabated. In this paper is described the next step in the evolution of ultra-low ESR surface-mount tantalum chip capacitors - devices boasting ESR lower than 10 m Ω. Not only must ESR be ever-lower with each new generation of low-ESR capacitors, but also it is becoming ever more crucial that the ESR of these capacitors be stable during the solder-reflow mounting process and over their operational life. Environmental threats include exposure to reflow temperatures between 200C and 250C, moisture, thermal shock, and long-term exposure to temperatures well above 100C. The latest-generation, low-ESR tantalum chip capacitors described here take advantage of an optimal combination of materials and methods to produce devices that not only have exceptionally low ESR, but also have ESR stability that is nothing short of phenomenal in the face of severe environmental stress. The general principles and strategies used to develop these new capacitors are described and data are presented to document the stability of the resulting devices when they are exposed to multiple IR reflows, moisture, thermal shock, and long-term lifetest at elevated temperatures.
机译:去年在第十九届电容器和电阻器技术研讨会上介绍了等效串联电阻(ESR)小于18 mΩ的钽片式电容器。该论文详细介绍了推动该设备发展的技术力量,并做出了一项预测,即如果过去5年的趋势继续下去,ESR需求将每1至1.5年下降一半。另外,据预测,如果制造商希望保持竞争力,单个电容器的ESR至少必须下降这么快。对ESR越来越低的电容器的需求仍未减弱。本文介绍了超低ESR表面贴装钽片式电容器的发展下一步-ESR低于10 mΩ的器件。新一代的低ESR电容器不仅必须降低ESR,而且在回流焊安装过程中以及在其整个使用寿命期间,稳定这些电容器的ESR变得越来越重要。环境威胁包括暴露于200°C至250°C的回流温度,潮湿,热冲击以及长期暴露于远高于100°C的温度。此处介绍的最新一代低ESR钽片式电容器利用材料和方法的最佳组合来生产不仅具有极低ESR的器件,而且具有ESR稳定性,即使面对严峻的环境也是如此环境压力。描述了用于开发这些新电容器的一般原理和策略,并提供了数据,以证明所得器件在高温下经受多次IR回流,湿气,热冲击和长期寿命测试时的稳定性。

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