A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

摘要

A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named Rewritable One-time- programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of- the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.