A 28-GHz band highly linear power amplifier with novel adaptive bias circuit for cascode MOSFET in 56-nm SOI CMOS

机译：具有新型自适应偏置电路的28 GHz频段高线性功率放大器，用于56 nm SOI CMOS中的共源共栅MOSFET

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents a highly linear 28-GHz band SOI CMOS power amplifier with an adaptive bias circuit for cascode MOSFET for next generation wireless communication. The power amplifier consists of a cascode MOSFET, the adaptive bias circuit and the input and output matching circuits. The power amplifier has exhibited a simulated output P1dB (1-dB gain compression point) of 19.2 dBm and a PAE of 39.0 %.

机译：本文提出了一种高线性度28 GHz频段SOI CMOS功率放大器，该放大器具有用于共源共栅MOSFET的自适应偏置电路，用于下一代无线通信。功率放大器包括一个共源共栅MOSFET，自适应偏置电路以及输入和输出匹配电路。功率放大器的模拟输出P1dB（1 dB增益压缩点）为19.2 dBm，PAE为39.0％。

著录项

来源
《2017 International Conference on Electron Devices and Solid-State Circuits》|2017年|1-2|共2页
会议地点 Hsinchu(CN)
作者
Hiroya Sato; Masao Yanagisawa; Toshihiko Yoshimasu;
展开▼
作者单位

The Graduate School of Fundamental Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, Japan;

The Graduate School of Fundamental Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, Japan;

The Graduate School of Fundamental Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, Japan;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
MOSFET; Power amplifiers; Linearity; Microwave amplifiers; Microwave circuits; Microwave FET integrated circuits; Microwave integrated circuits;

机译：MOSFET;功率放大器;线性;微波放大器;微波电路;微波FET集成电路;微波集成电路;;

相似文献

外文文献
中文文献
专利

1. A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI [J] . Yoshimasu Toshihiko, Fang Mengchu, Sugiura Tsuyoshi IEICE Transactions on fundamentals of electronics, communications & computer sciences . 2021,第2期

机译：A 26-GHz带高退液效率堆叠 - FET功率放大器IC，具有45-NM CMOS SOI的自适应控制偏置和负载电路
2. Integrated Bias Circuits of RF CMOS Cascode Power Amplifier for Linearity Enhancement [J] . Koo B., Na Y., Hong S. Microwave Theory and Techniques, IEEE Transactions on . 2012,第2期

机译：RF CMOS级联功率放大器的集成偏置电路，可增强线性度
3. A high power CMOS cascode power amplifier with adaptive dynamic bias control for linearity enhancement [J] . Microwave and optical technology letters . 2020,第7期

机译：具有自适应动态偏置控制的高功率CMOS CASCODE功率放大器，用于线性增强
4. A 28-GHz band highly linear power amplifier with novel adaptive bias circuit for cascode MOSFET in 56-nm SOI CMOS [C] . Hiroya Sato, Masao Yanagisawa, Toshihiko Yoshimasu IEEE International Conference on Electron Devices and Solid-State Circuits . 2017

机译：一个28-GHz频段高度线性功率放大器，具有56-NM SOI CMOS中的Cascode MOSFET的新型自适应偏置电路
5. Ka-Band and W-Band Millimeter-Wave Wideband Linear Power Amplifier Integrated Circuits at 30 GHz and 90 GHz with Greater Than 100 mW OutputPowers in Commercially-Available 0.12 Micron Silicon Germanium HBT Technology [D] . Chang, Michael S. 2017

机译：采用商用0.12微米硅锗HBT技术的30 GHz和90 GHz的Ka波段和W波段毫米波宽带线性功率放大器集成电路，输出功率超过100 mW
6. Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation [O] . Hojong Choi, Park Chul Woo, Jung-Yeol Yeom, 2017

机译：用于高频脉冲回波仪表的高压功率放大器的功率MOSFET线性化器
7. CMOS Voltage and Current Reference Circuits consisting of Subthreshold MOSFETs – Micropower Circuit Components for Power-Aware LSI Applications – [O] . Ken Ueno 2010

机译：CMOS电压和电流参考电路由亚阈值MOSFET组成 - 用于电源感知LSI应用的MicroPower电路组件 -

A 28-GHz band highly linear power amplifier with novel adaptive bias circuit for cascode MOSFET in 56-nm SOI CMOS

摘要

著录项

相似文献

相关主题

期刊订阅