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Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

机译：垂直MRAM器件的合成反铁磁参考层的自旋传递转矩驱动动力学

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Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.

机译：自旋转移力矩磁性随机存取存储器（STT-MRAM）基于由两个被MgO隧道势垒隔开的铁磁电极制成的磁隧道结（MTJ）。

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来源
《2017 IEEE International Magnetics Conference》|2017年|1-1|共1页
会议地点 Dublin(IE)
作者
L. Thomas; M. Benzaouia; S. Serrano-Guisan; G. Jan; S. Le; Y. Lee; H. Liu; J. Zhu; J. Iwata-Harms; R. Tong; Y. Yang; V. Sundar; S. Patel; J. Haq; D. Shen; R. He; V. Lam; J. Teng; P. Liu; A. Wang; T. Zhong; T. Torng; P. Wang;
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作者单位

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

TDK - Headway Technologies, Inc., Milpitas, CA, United States of America;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Switches; Resistance; Magnetic tunneling; Electrodes; Analytical models; Magnetic separation; Magnetization;

机译：开关;电阻;磁隧穿;电极;分析模型;磁分离;磁化;

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专利

1. Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer [J] . Lee Seung-Eun, Shim Tae-Hun, Park Jea-Gun Nanotechnology . 2015,第47期

机译：基于Co2Fe6B2 / MgO的垂直自旋转传递扭矩磁隧道结自旋阀，无[Co / Pt]（n）下部合成反磁性层
2. Perpendicular spin-torque switching with a synthetic antiferromagnetic reference layer [J] . Ioan Tudosa, J. A. Katine, S. Mangin, Applied Physicsletters . 2010,第21期

机译：具有合成反铁磁参考层的垂直自旋转矩开关
3. Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer [J] . Kay Yakushiji, Akio Fukushima, Hitoshi Kubota, _Applied Physics Express . 2013,第11期

机译：具有合成反铁磁参考层的垂直磁化磁隧道结中的超低压自旋转移开关
4. Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices [C] . L. Thomas, M. Benzaouia, S. Serrano-Guisan, IEEE Magnetics Conference . 2017

机译：旋转转移扭矩驱动的垂直MRAM器件的合成反铁磁参考层的动态
5. Magnetoresistive devices with perpendicular magnetic anisotropy for spin-torque driven applications. [D] . Park, Jeong-Heon. 2010

机译：具有垂直磁各向异性的磁阻器件，用于自旋转矩驱动的应用。
6. Topological non-topological and instanton droplets driven by spin-transfer torque in materials with perpendicular magnetic anisotropy and Dzyaloshinskii–Moriya Interaction [O] . Mario Carpentieri, Riccardo Tomasello, Roberto Zivieri, -1

机译：在具有垂直磁各向异性和Dzyaloshinskii–Moriya相互作用的材料中由自旋转移力矩驱动的拓扑非拓扑和瞬时液滴
7. Magnetic soliton dynamics driven by spin-transfer torque in perpendicular magnetic anisotropy devices [O] . Finocchio G, Puliafito V, Komineas S, 2013

机译：垂直磁各向异性装置中自旋传递转矩驱动的磁孤子动力学

Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

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