Simulation and analysis of magnetic field strength with magneto-resistive sensor: A future application

摘要

The optimum orientation of four bar magnets to give an effective magnetic field strength with magneto-resistive (MR) sensor is proposed in this paper. The bar magnets having the same magnetic field strength of 4.51 kA/m are used and placed at a nominal distance from the MR sensor to get the maximum magnetic field strength and sensor voltage. The magnetic orientation and it's field strength is simulated and analyzed through Comsol Software and validated with the laboratory experimental results. The experimental result shows that the SSNN orientation at a distance of 0.5 cm from MR sensor comparatively gives higher magnetic field strength and sensor output voltage.