Design of a dual-band high efficiency class-J power amplifier

摘要

Structure in the design of a dual band Class-J power amplifiers (PA) for obtaining high efficiency is presented in this work. A large-signal transistor model is used to estimate the device's output parasitic elements and based on this, A dedicated matching network used two section transmission line are employed to synthesize Class-J impedance in both two bands. The simulated results of the designed amplifier show an average 65% power added efficiency (PAE) across 0.6-1.0 GHz and an average 60% PAE across 2.6-3.0 GHz whilst delivering an average output power of more than 39.5 dBm. Realization of the design shows the proposed structure's potential to implement the dual band Class-J PA.