3-Bit phase shifter at 3–6GHz band for WiFi, LTE and 5G applications

摘要

In this paper, we present a novel phase shifter topologies to construct 45°, 90° and 180° phase shifter cells laid-out using 180nm TSMC technology. CMOS switches are used instead of PIN diodes to have advantages of simple control circuit for switching and low power consumption. Operation of the new circuit is based on the phase shifting properties of the symmetrical all-pass LC lattices. It is straight forward to construct phase shifting cells over a wide frequency band, with various angles for multi bit phase array systems. A numerical method is analyzed in MATLAB. Top level design is simulated in CADENCE where actual elements are used from TSMC and inductors are designed in ASITIC tool. To compensate for the insertion loss an LNA for 3-6GHz band is designed and integrated. A phase shift for integrated circuit between 3-6GHz is achieved with maximum 2.2°, 3.2° and 4.3° phase errors and insertion losses are between +1.8~+4.5dB, -0.7~+1.5dB and +0.4~+2dB for 45°, 90° and 180° respectively.