Power efficient shift register using FinFET technology

摘要

A low power shift register by using FinFET is proposed in this paper. This is done to achieve improvement in performance of shift register. Previously designed Shift register makes use of CMOS (complementary metal-oxide semiconducter) which dissipates more power as compared to the proposed circuit, so we need a circuit that work on low power. Now we design a shift register by using FinFET technology that circuit show the reducing leakage power. This overcomes circuit of FinFET shift register run on low power. This FinFET shift register is an important memory element in digital system. The proposed circuit is expected to high speed and high reliability due to the using FinFET technology. The comparison between shift register and FinFET shift resister are using CMOS 45nm technology which lower 41% of leakage power then the previous transistor technology.