V-band frequency reconfigurable cavity-based bandpass filters

摘要

Two-pole and three-pole RF-MEMS-enabled tunable bandpass filters are demonstrated as the first all-silicon frequency reconfigurable cavity filters operating in the V band. They are tuned by means of electrostatically-actuated corrugated MEMS diaphragms that are located on top of evanescent-mode cavity resonators. The two-pole filter exhibits tunable center frequency between 57.7 to 63 GHz with worst-case insertion loss (IL) of 2.8 dB and maximum actuation voltage of 140 V. The three-pole filter demonstrates tunable frequency between 61.9 to 65 GHz with a maximum actuation voltage of 150 V and IL better than 4.9 dB.