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Acceleration of hydrophobicity transfer rate of contaminated HTV silicone rubber by plasma jet

机译:等离子射流加速受污染的HTV硅橡胶的疏水转移速率

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Silicone rubber, as the important material of composite insulator, has been widely used in the electrical power system due to its excellent hydrophobicity transfer performance. It is of great significance to find an effective method to improve the hydrophobicity of severely contaminated HTV silicone rubber when it lose its natural hydrophobicity transfer performance. This paper found that treatment of the atmospheric pressure plasma jet using dielectric barrier discharge method could promote the hydrophobicity transfer rate of the contaminated HTV silicone rubber when it was heavily contaminated. Factors such as processing time and transfer time have a significant effect on the treatment effect. It was shown that the hydrophobicity recovery rate increased with the increase of the processing time. After long time transfer, the improved hydrophobicity of the contaminated HTV surface would not disappear. Contaminated composite insulator slices were treated by the high-power plasma jet device and the hydrophobicity of the slices was obviously improved in a short processing time (2 to 8 seconds) as well. Scanning electron microscopy (SEM) of the HTV surface proved that it was the active species of the plasma jet that promoted the hydrophobic molecules to transfer to the pollution surface by reacting with the HTV material.
机译:硅橡胶作为复合绝缘子的重要材料,因其优异的疏水转移性能而被广泛应用于电力系统。寻找一种有效的方法来改善严重污染的HTV硅橡胶失去天然疏水转移性能时的疏水性具有重要意义。本文发现,采用电介质阻挡放电法处理常压等离子体射流可以提高重污染的HTV硅橡胶的疏水性转移速率。诸如处理时间和转移时间之类的因素对治疗效果具有显着影响。结果表明,随着处理时间的增加,疏水性恢复率增加。长时间转移后,受污染的HTV表面改善的疏水性不会消失。用高功率等离子体喷射装置处理了被污染的复合绝缘子薄片,并且在短处理时间(2至8秒)内,薄片的疏水性也得到了明显改善。 HTV表面的扫描电子显微镜(SEM)证明,正是等离子流的活性物质通过与HTV材料反应,促使疏水分子转移到污染表面。

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