Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

摘要

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of press-pack type IGCT, module type IGBT, press-pack type IEGT, and press-pack type IGBT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack IGCT type semiconductor device has the highest efficiency.